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Remove unused and broken mtd->ecctype and mtd->eccsize fields
from struct mtd_info. Do not remove them from userspace API
data structures (don't want to breake userspace) but mark them
as obsolete by a comment. Any userspace program which uses them
should be half-broken anyway, so this is more about saving
data structure size.
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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OneNAND has internal bufferRAMs. The driver keeps track of
what is in the bufferRAM to save having to load from the
NAND core. After an erase operation, the driver must
mark bufferRAM invalid if it refers to the erased block.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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OneNAND double-density package (DDP) has two chips, each with
their own bufferRAM. The driver will skip loading data from
the NAND core if the data can be found in a bufferRAM, however
in that case, the correct chip's bufferRAM must be selected
before reading from bufferRAM.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Provide the bad block scan with its own read function so that important error
messages that are not from the the bad block scan, can always be printed.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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When a write is done, the length written is returned. When a
single subpage is written the length returned should be the
subpage size, however the page size was being returned.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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OneNAND can write oob to successive pages, but NAND
does not do that. For compatibility, disallow OneNAND
from writing past the end of the page.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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In previos patch, there's typo so fix it
Remove unnecessary goto statement
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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It use blockpage instead of a pair (block, page). It can also cover a small chunk access. 0x00, 0x20, 0x40 and so on.
And in JFFS2 behavior, sometimes it reads two pages alternatively.
e.g., It first reads A page, B page and A page.
So we check another bufferram to find requested page.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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- Iterations of the patch to add oob auto-placement support to OneNAND left a line of code that was meant to have been deleted.
- read mtd->oobsize in onenand_transfer_auto_oob to optimized memcpy
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Enable the use of oob operation mode MTD_OOB_AUTO with OneNAND.
Note that MTD_OOB_RAW is still not supported.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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- Remove unused fields
- Fix typo
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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When write-verify is enabled (CONFIG_MTD_ONENAND_VERIFY_WRITE),
the data written is read back and compared. The comparison
was being made between dataRAM buffers, but this does not
verify that the data made it to the dataRAM correctly in
the first place. This patch amends write-verify to
compare back to the original buffer. It also now verifies
sub-page writes.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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OneNAND records bad block information in the out-of-band area of either the first or second page of a block. Due to a logic error, only the first page was being checked.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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OneNAND does 2 memory allocations for bad block information.
Only one of them was being freed.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Update copyrights and code cleanup
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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- DDP code clean-up
- Reduce block & bufferram operations in DDP
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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If OneNAND is operating within specification, all operations should easily be
completed within the 20 millisecond timeout.
This patch faithlessly adds a check for the timeout and returns an error in
that case.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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We have to set ONENAND_REG_START_BLOCK_ADDRESS to avoid status error
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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The read-while-load method of reading from OneNAND needs to allow
for the change of bufferRAM address at the boundary between the
two chips in a double density (DDP) device.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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we don't need to return ecc error when 1-bit ecc.
We only return error code when 2-bit ecc error
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Read-while-load enables higher performance read operations.
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Even though there is ECC error. OneNAND driver updates the buffram as valid
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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This patch teaches OneNAND to release processor in
read/write/erase cycles and let other processes proceed.
Also, remove buggi touch watchdog call which only hides
the problem instead of solving it.
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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OneNAND supports up to 4 writes at one NAND page. Add support of this feature.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Fix onenand_wait error reporting
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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There are missing place in recent MTD oob patch
http://git.infradead.org/?p=mtd-2.6.git;a=commitdiff;h=7014568bad55c20b7ee4f439d78c9e875912d51f
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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The newly-added cafe_ecc.c had a lot of it because of the way the lookup
table was auto-generated; clean up the other files too while we're at it.
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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Signed-off-by: Yan Burman <yan_952@hotmail.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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Idea from Jarkko Lavinen
Signed-off-by: Jarkko Lavinen <jarkko.lavinen@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Now you can use mtd lock inferface on OneNAND
The idea is from Nemakal, Vijaya, thanks
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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We can use the two methods to wait.
1. polling: read interrupt status register
2. interrupt: use kernel ineterrupt mechanism
To use interrupt method, you first connect onenand interrupt pin to your
platform and configure interrupt properly
Signed-off-by: Kyungmin Park <kyungmin.park at samsung.com>
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Signed-off-by: Adrian Bunk <bunk@stusta.de>
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OneNAND lock scheme depends on density and process of chip.
Some OneNAND chips support all block unlock
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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Now the bootloader configures the OneNAND sync. burst mode.
So we don't access Sync. burst mode related registers in kernel.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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- fix OneNAND probe whether OneNAND Sync. Burst read mode or not
- fix OneNAND reset wait problem
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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Hopefully the last iteration on this!
The handling of out of band data on NAND was accompanied by tons of fruitless
discussions and halfarsed patches to make it work for a particular
problem. Sufficiently annoyed by I all those "I know it better" mails and the
resonable amount of discarded "it solves my problem" patches, I finally decided
to go for the big rework. After removing the _ecc variants of mtd read/write
functions the solution to satisfy the various requirements was to refactor the
read/write _oob functions in mtd.
The major change is that read/write_oob now takes a pointer to an operation
descriptor structure "struct mtd_oob_ops".instead of having a function with at
least seven arguments.
read/write_oob which should probably renamed to a more descriptive name, can do
the following tasks:
- read/write out of band data
- read/write data content and out of band data
- read/write raw data content and out of band data (ecc disabled)
struct mtd_oob_ops has a mode field, which determines the oob handling mode.
Aside of the MTD_OOB_RAW mode, which is intended to be especially for
diagnostic purposes and some internal functions e.g. bad block table creation,
the other two modes are for mtd clients:
MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is
described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's
up to the caller to make sure that the byte positions are not used by the ECC
placement algorithms.
MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in
the out of band area which are described by the oobfree tuples in the ecclayout
data structre which is associated to the devicee.
The decision whether data plus oob or oob only handling is done depends on the
setting of the datbuf member of the data structure. When datbuf == NULL then
the internal read/write_oob functions are selected, otherwise the read/write
data routines are invoked.
Tested on a few platforms with all variants. Please be aware of possible
regressions for your particular device / application scenario
Disclaimer: Any whining will be ignored from those who just contributed "hot
air blurb" and never sat down to tackle the underlying problem of the mess in
the NAND driver grown over time and the big chunk of work to fix up the
existing users. The problem was not the holiness of the existing MTD
interfaces. The problems was the lack of time to go for the big overhaul. It's
easy to add more mess to the existing one, but it takes alot of effort to go
for a real solution.
Improvements and bugfixes are welcome!
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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The nand_oobinfo structure is not fitting the newer error correction
demands anymore. Replace it by struct nand_ecclayout and fixup the users
all over the place. Keep the nand_oobinfo based ioctl for user space
compability reasons.
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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The info structure for out of band data was copied into
the mtd structure. Make it a pointer and remove the ability
to set it from userspace. The position of ecc bytes is
defined by the hardware and should not be changed by software.
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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MTD clients are agnostic of FLASH which needs ECC suppport.
Remove the functions and fixup the callers.
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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These functions were never implemented and added only bloat to
partition and concat code.
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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NAND writev(_ecc) support is not longer necessary. Remove it.
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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o Add a flag MTD_BIT_WRITEABLE for devices that allow single bits to be
cleared.
o Replace MTD_PROGRAM_REGIONS with a cleared MTD_BIT_WRITEABLE flag for
STMicro and Intel Sibley flashes with internal ECC. Those flashes
disallow clearing of single bits, unlike regular NOR flashes, so the
new flag models their behaviour better.
o Remove MTD_ECC. After the STMicro/Sibley merge, this flag is only set
and never checked.
Signed-off-by: Joern Engel <joern@wh.fh-wedel.de>
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At least two flashes exists that have the concept of a minimum write unit,
similar to NAND pages, but no other NAND characteristics. Therefore, rename
the minimum write unit to "writesize" for all flashes, including NAND.
Signed-off-by: Joern Engel <joern@wh.fh-wedel.de>
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We need to check block cmd only instead with comparing with cmd
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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One Block of the NAND Flash Array memory is reserved as
a One-Time Programmable Block memory area.
Also, 1st Block of NAND Flash Array can be used as OTP.
The OTP block can be read, programmed and locked using the same
operations as any other NAND Flash Array memory block.
OTP block cannot be erased.
OTP block is fully-guaranteed to be a valid block.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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There's erase bug in DDP.
We need to add DDP select in erase
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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There's some problem with write oob in serveral platform.
So we write oob with oobsize aligned (16bytes) instead of 3 bytes (from {2,
3})
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Signed-off-by: Jarkko Lavinen <jarkko.lavinen@nokia.com>
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Some free byte positions at onenand_oob_64 were wrong. This was also
reported by Christian Lehne. 3 byte slots are at 2+16*i and 2 byte
slots at 14+16*i.
Signed-off-by: Jarkko Lavinen <jarkko.lavinen@nokia.com>
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